The phenomenon of anodization in the plasma of a dc low pressure
oxygen glow discharge is investigated, both from the viewpoint of the
mechanisms involved and for potential applications. Aspects studied
include the effect of discharge conditions on anodization rate, the
significance of negative oxygen ions in the plasma, the ionic current field strength relation in the oxide, and the anodization of metal films
on silicon for MIS devices.
It was found that the process does not utilize gaseous negative
ions from the neutral plasma, and that species transport through the oxide
is by high field ionic conduction. The variation of anodization rate
with discharge conditions was attributed principally to a dependence of
the oxide field strength on the electron energy distribution and density
in the plasma. Double oxide layer MIS structures were fabricated, and
charge storage effects were investigated. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate
| Identifer | oai:union.ndltd.org:UBC/oai:circle.library.ubc.ca:2429/41273 |
| Date | January 1973 |
| Creators | Olive, Graham |
| Publisher | University of British Columbia |
| Source Sets | University of British Columbia |
| Language | English |
| Detected Language | English |
| Type | Text, Thesis/Dissertation |
| Rights | For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use. |
Page generated in 0.002 seconds