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Reliability study of enhancement-mode AIGaN/GaN HEMT fabricated with fluorine plasma treatment technology /

Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2008. / Includes bibliographical references (leaves 76-87). Also available in electronic version.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/271592529
Date January 2008
CreatorsYi, Congwen.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceView abstract or full-text.

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