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Povrchová topografie a-CSi:H vrstev připravených v kontinuálním režimu PECVD / Surface topography of a-CSi:H films deposited by continuous wave PECVD

The thesis describes surface topography of a-CSi:H films deposited by continuous wave plasma enhanced chemical vapor deposition (PECVD) based on tetravinylsilane monomer (TVS). Thin films are completely used in many fields of modern technologies and their physical and mechanical properties are affected by thin film preparation techniques. In this thesis the thin films were deposited by PECVD method on silicon wafers with the pure TVS monomer. Deposited samples were topographically described and analyzed using atomic force microscopy (AFM). The main characteristics which were described are RMS roughness, autocorrelation function and a size distribution of grains on the thin film surface. Analysis was realized with two sets of samples with different powers and thickness. The main results were statistically evaluated like a mixture of object on the surface prepared in different deposition conditions.

Identiferoai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:376884
Date January 2018
CreatorsBlažková, Naďa
ContributorsPálesch, Erik, Čech, Vladimír
PublisherVysoké učení technické v Brně. Fakulta chemická
Source SetsCzech ETDs
LanguageCzech
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/masterThesis
Rightsinfo:eu-repo/semantics/restrictedAccess

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