Return to search

The study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilane

No description available.
Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/19991
Date12 1900
CreatorsChiang, Daniel Young
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Detected LanguageEnglish
TypeDissertation
RightsAccess restricted to authorized Georgia Tech users only.

Page generated in 0.0015 seconds