Solar energy conversion, miniaturization of semiconductor devices and associated lifetime, reliability and efficiency of devices are the basic premise of this work. This work is focused on the study of optoelectronic devices especially solar cells and its nondestructive diagnostic. Solar cells are advantageous for study mainly because the pn junction is located near the surface and contains a lot of inhomogeneities. It has been difficult until recently to investigate their local physical (electrical and optical) parameters due to the size of inhomogeneities. Behavior of inhomogeneities can be well understood with knowledge of its local properties. Establishment of measurement workplace, that satisfies requirements for measurement of local emission and optically induced current measurement, allows us detection and localization of inhomogeneities with spatial resolution more or less 100 nm. The core of thesis is characterization of imperfection using nondestructive techniques in the macroscopic region but primarily in microscopic region using scanning probe microscopy. Integral parts of the work are characterization techniques for photoelectrical devices, microscopic techniques and data processing. Scanning near-field optical microscope is used for the purpose of microscopic characterization such as topography, local optical, photoelectrical and electrooptical properties of structures in high spatial resolution. Locally induced current technique, current voltage characteristics, emission from reversed bias pn junction measurement including its thermal dependence are used for samples investigation in macroscopical region. It is possible to localize defects and structure inhomogeneity using mentioned techniques. Localised defects are consequently analyzed for composition and measured using electron microscopy. Specific outputs of work are classification of photoelectric devices defects and specification of nondestructive characterization techniques used for defect detection. Experimental characterization techniques are described together with defects measurement procedures. The key output is the catalog of serious defects which was detected. Particular defects of samples are shown including describe of its properties and physical meaning.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:233561 |
| Date | January 2012 |
| Creators | Škarvada, Pavel |
| Contributors | Hrabovský, Miroslav, Lazar, Josef, Tománek, Pavel |
| Publisher | Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/doctoralThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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