The spin transport and dynamics of optically injected spin polarized carri- ers are studied with a high spatial and/or time resolution in semiconductor GaAs-based heterostructures in multiple transport regimes. An unexpectedly long-scale and high-speed spin diffusion transport is observed in a long-lived electron sub-system induced optically at an undoped single GaAs/AlGaAs heterointerface. A diffusion and drift-dominated spin transport is investi- gated using an electrical spin-detection via the inverse spin Hall effect in doped GaAs-based systems at room and low temperatures. It is shown that the inverse spin Hall signal and the spin transport parameters can be con- trolled by a direct application of an electric field or by expanding a depleted zone of a planar pn-junction.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:352058 |
| Date | January 2016 |
| Creators | Nádvorník, Lukáš |
| Contributors | Jungwirth, Tomáš, Ramsay, Andrew, Veis, Martin |
| Source Sets | Czech ETDs |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/doctoralThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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