A 5.8 GHz RF Power Amplifier (PA) is designed and fabricated in this work, which has very high linearity through a built-in linearizer. The PA is designed, post-layout simulated by Agilent Advanced Design System (ADS) software and fabricated by Win-Semiconductors 0.15µm pHEMT process technology. The post-layout simulation results illustrate the power amplifier can obtained an output power of 23.98 dBm, a power gain of 32.28 dB and a power added efficiency (PAE) of 29% at saturation region, the 3rd intermodulation distortion (IMD3) of -37.7 dBc at 0 dBm input power is attained when operation frequency is 5.8 GHz. We finally obtain that the output power of 17.97 dBm and power gain of 27.97 dB at input power of -10 dBm, PAE of 11.65% at input power of 0 dBm and the IMD3 of -25.66 dBc at -20 dBm input power by measurement, when operation frequency is 5.2 GHz. So the overall RF performance of the PA demonstrates high power, high efficiency and high linearity.
| Identifer | oai:union.ndltd.org:ucf.edu/oai:stars.library.ucf.edu:etd-2987 |
| Date | 01 January 2011 |
| Creators | Wang, Yiheng |
| Publisher | STARS |
| Source Sets | University of Central Florida |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | Electronic Theses and Dissertations |
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