When electronic components are to be used in systems destined for operation in the extraterrestrial environment, one must be concerned about the effects of the naturally occurring radiation in outer space. For example, power metal-oxide-semiconductor-field-effect transistors (MOSFETs) and power bipolar junction transistors (BJTs) are susceptible to a phenomenon called single-event burnout (SEB) which may result from bombardment by heavy ions originating from the nuclear reactions within the sun and other stars. SEB is a catastrophic failure mechanism initiated by the passage of a heavy ion through sensitive regions of the power MOSFET or power BJT. The main thrust of this dissertation is an analytical model describing the device-related aspects of the SEB mechanism. Physical device parameters such as doping concentrations, dimensions of various regions, and operating bias are related to SEB by the model. It is shown that the model predicts a decrease in the SEB susceptibility with a decrease in the internal base resistance (in the power BJT or parasitic BJT in the power MOSFET structure), a decrease in the operating bias, or an increase in the ambient device temperature. These findings are then qualitatively verified with experimental data.
| Identifer | oai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/185988 |
| Date | January 1992 |
| Creators | Johnson, Gregory Howard. |
| Contributors | Schrimpf, Ron, Galloway, Ken, Brews, John |
| Publisher | The University of Arizona. |
| Source Sets | University of Arizona |
| Language | English |
| Detected Language | English |
| Type | text, Dissertation-Reproduction (electronic) |
| Rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. |
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