The need for smaller and more efficient power supplies steadily grows. Many power supplies incorporate high-frequency dc-to-dc switching converters to meet these demands. Recently, a new class of switching converters has been introduced which can operate at very high frequencies to further reduce size and increase efficiency. They are called quasi-resonant converters. Previously, the dc characteristics of many of these converters had been determined, assuming ideal components and circuit operating conditions. However, as the frequency of operation increases, the circuit behavior becomes less ideal causing changes in the expected characteristics. This is because resistive losses, semiconductor junction capacitances, and other parasitic (undesirable) elements become more pronounced at higher frequencies.
This thesis investigates the effects of parasitic elements on the dc characteristics of several zero-current-switched, buck-derived quasi-resonant converters. For the quasi-resonant buck converter, it is demonstrated that for certain operating conditions the dc voltage gain can increase when parasitic losses are increased. Design guidelines are given for maximizing this converter's efficiency. Various forward quasi-resonant topologies are investigated, and the effects of parasitic elements on circuit operation are highlighted. A dc analysis is performed for the secondary-resonance forward converter, which has not previously been analyzed. This converter can operate either in full-wave or half-wave mode. Its dc voltage gain in full-wave mode is less sensitive to load variations than other resonant forward topologies that only operate in half-wave mode. / Master of Science
Identifer | oai:union.ndltd.org:VTETD/oai:vtechworks.lib.vt.edu:10919/45924 |
Date | 20 November 2012 |
Creators | Roufberg, Lewis Marlin |
Contributors | Electrical Engineering, Lee, Fred C., Vorperian, Vatche, Cho, Bo H. |
Publisher | Virginia Tech |
Source Sets | Virginia Tech Theses and Dissertation |
Detected Language | English |
Type | Thesis, Text |
Format | v, 190 leaves, BTD, application/pdf, application/pdf |
Rights | In Copyright, http://rightsstatements.org/vocab/InC/1.0/ |
Relation | OCLC# 16271765, LD5655.V855_1987.R682.pdf |
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