A new equivalent circuit model for IGBT is presented. It takes into account both electron and hole conduction in sensors and is incorporated with SPICE3 for the simulation of three types of current sensors, namely active, bipolar, and MOS sensors. It adopts a multi-MOS model to include the doping variation in the MOS body. The results agree well with the current sensing measurements within an average error of 4.4%.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0404105-150809 |
| Date | 04 April 2005 |
| Creators | Tseng, Chun-Chieh |
| Contributors | Chia-Hsiung Kao, Y.-T. Tsai, Ying-Chung Chen, Mau-Phon Houng, Jyi-Tsong Lin |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0404105-150809 |
| Rights | off_campus_withheld, Copyright information available at source archive |
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