The defect structure, atomic structure, and energy of the interphase boundaries between an fcc matrix and a lath-shaped bcc precipitate in Ni-45 wt% Cr were investigated. The interfacial structure on the side facet of the precipitate consists of regular structural ledges and misfit dislocations. No regular defect structure can be found on the habit plane, or broad face, of the lath except for atomic-scale structural ledges. High resolution electron microscopy (HREM) observations show the (12¯1)<sub>f</sub> habit plane is coherent and is a good matching interface. Based upon conventional transmission electron microscopy (TEM) observations, the orientation of the habit plane results from advancing growth ledges on the conjugate plane of the Kurdjumov-Sachs orientation relationship. Using embedded atom method (EAM) simulations, the interfacial energy of the (12¯1)<sub>f</sub> habit plane is calculated and the simulated interphase structure is compared with the HREM observations. The simulated interface represents a major portion of the observed interface. The calculated interfacial energy of the (12¯1)<sub>f</sub> habit plane is 210 mJ/m², lower than typical grain boundary energies indicating this habit plane is a low-energy interphase boundary. A non-Bain lattice correspondence is identified and employed to predict the (12¯1)<sub>f</sub> habit plane successfully, although a Bain correspondence is more successful at predicting the elongation direction for the precipitate. Geometric matching is proposed to be responsible for determining the orientation of the precipitate habit plane and the growth direction. Lattice correspondence-based approaches such as the invariant line model and the phenomenological theory of martensitic crystallography can mimic aspects of geometric matching, but they do not accurately reflect the transformation mechanism during precipitation of bcc laths from an fcc parent. / Ph. D.
| Identifer | oai:union.ndltd.org:VTETD/oai:vtechworks.lib.vt.edu:10919/38172 |
| Date | 06 June 2008 |
| Creators | Chen, Jhewn-Kuang |
| Contributors | Materials Engineering Science, Reynolds, William T. Jr., Desu, Seshu B., Farkas, Diana, Gibbs, Gerald V., Howe, J. M., Kampe, Stephen L. |
| Publisher | Virginia Tech |
| Source Sets | Virginia Tech Theses and Dissertation |
| Language | English |
| Detected Language | English |
| Type | Dissertation, Text |
| Format | xiii, 158 leaves, BTD, application/pdf, application/pdf |
| Rights | In Copyright, http://rightsstatements.org/vocab/InC/1.0/ |
| Relation | OCLC# 34398118, LD5655.V856_1995.C445.pdf |
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