The major objective of this thesis is the analysis of novel AlInSb/InSb QW Schottky diodes which may play an important role in future low-power high-speed electronic devices such as FETs, as well as showing promise for high frequency rectification. Although InSb has the highest electron mobility among the III-V semiconductors, due to lattice mismatch with common binary substrates, its 2DEG systems have far less mobility than anticipated values. The large lattice mismatch between AlInSb alloy and the substrate GaAs in AlInSb/InSb system results in a high density of structural defects which results in a high leakage current. Both large leakage current and low barrier height introduce difficulties in forming good Schottky diodes. Schottky diodes in this material system are largely unexplored. Two different planar structure designs (elementary, and surface channel) were used in this thesis to form AlInSb/InSb QW Schottky diodes. Various surface treatments were trialled to suppress diode leakage current. The fabricated AlInSb/InSb QW Schottky diodes were evaluated based on I-V measurements over a wide range of temperatures 3-290 K. Various models are evaluated and successfully used to describe the I-V characteristics of these AlInSb/InSb QW Schottky diodes. Depending on the applied surface treatment, two barrier heights (Φ).
| Identifer | oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:753628 |
| Date | January 2018 |
| Creators | Alshaeer, Fadwa |
| Publisher | Cardiff University |
| Source Sets | Ethos UK |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
| Source | http://orca.cf.ac.uk/115388/ |
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