Wang Hui. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2004. / Includes bibliographical references (leaves 78-84). / Abstracts in English and Chinese. / ABSTRACT (ENGLISH) --- p.i / ABSTRACT (CHINESE) --- p.iii / ACKNOWLEDGEMENTS --- p.iv / CONTENTS --- p.v / Chapter CHAPTER 1: --- INTRODUCTION --- p.1 / Chapter 1.1 --- Motivation behind This Study --- p.1 / Chapter 1.2 --- Concept of Quantum Dots --- p.2 / Chapter 1.2.1 --- Introduction to Semiconductors / Chapter 1.2.2 --- From Bulk Semiconductor to Quantum Dots / Chapter 1.3 --- Device Applications of Quantum Dots --- p.10 / Chapter 1.3.1 --- Laser Diodes / Chapter 1.3.2 --- Infrared Photodetectors / Chapter CHAPTER 2: --- METAL-ORGANIC VAPOR PHASE EPITAXY --- p.14 / Chapter 2.1 --- Introduction in Epitaxial Growth --- p.14 / Chapter 2.1.1 --- What's Epitaxy / Chapter 2.1.2 --- Heteroepitaxy Techniques / Chapter 2.2 --- MOVPE Growth System and Principles --- p.15 / Chapter 2.2.1 --- What's MOVPE / Chapter 2.2.2 --- MOVPE Chemistry and Basic Concepts / Chapter 2.2.3 --- Growth Regimes in MOVPE Process / Chapter CHAPTER 3: --- SELF-ASSEMBLED QUANTUM DOT GROWTH THEORY --- p.23 / Chapter 3.1 --- Strained Layer Heteroepitaxy --- p.23 / Chapter 3.2 --- Epitaxial Growth Modes --- p.24 / Chapter 3.2.1 --- Introduction / Chapter 3.2.2 --- Frank-van-der-Merve Mode / Chapter 3.2.3 --- Stranski-Krastanow Mode / Chapter 3.2.4 --- Volmer-Weber Mode / Chapter 3.3 --- Self-assembly of Quantum Dots --- p.30 / Chapter 3.4 --- Current Issues and Problems --- p.30 / Chapter CHAPTER 4: --- EXPERIMENTAL METHODS --- p.34 / Chapter 4.1 --- Equipment --- p.34 / Chapter 4.2 --- Preparation of Sample --- p.34 / Chapter 4.3 --- Growth Rate and Composition Determination --- p.35 / Chapter 4.4 --- Characterization Techniques --- p.40 / Chapter 4.4.1 --- Atomic Force Microscopy (AFM) / Chapter 4.4.2 --- Photoluminescence (PL) / Chapter 4.4.3 --- Other Techniques / Chapter CHAPTER 5: --- RESULTS AND DISCUSSION --- p.44 / Chapter 5.1 --- Introduction --- p.44 / Chapter 5.2 --- Formation Trends of In As QDs --- p.45 / Chapter 5.2.1 --- Experimental Procedures / Chapter 5.2.2 --- Results and Discussion / Chapter 5.2.2.1 --- Effect of Growth Temperature / Chapter 5.2.2.2 --- Effect of Growth Rate / Chapter 5.2.2.3 --- Effect of In As Coverage / Chapter 5.2.2.4 --- Effect of Buffer Layer Material / Chapter 5.2.3 --- Summary / Chapter 5.3 --- Annealing of InAs QDs under Dissimilar Ambient Flux --- p.65 / Chapter 5.3.1 --- Experimental Procedures / Chapter 5.3.2 --- Results and Discussion / Chapter 5.3.3 --- Summary / Chapter CHAPTER 6: --- CONCLUSIONS --- p.75 / Chapter 6.1 --- Summary --- p.75 / Chapter 6.2 --- Future Work --- p.77 / BIBLIOGRAPHY --- p.78 / PUBLICATION LIST --- p.84 / APPENDIX: Abbreviations --- p.85
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_324918 |
| Date | January 2004 |
| Contributors | Wang, Hui, Chinese University of Hong Kong Graduate School. Division of Electronic Engineering. |
| Source Sets | The Chinese University of Hong Kong |
| Language | English, Chinese |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, vi, 86 leaves : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
Page generated in 0.0017 seconds