In this work, ordered all-binary short-period strained InAs/GaAs superlattice quantum wells were studied as an alternative to strained ternary alloy InGaAs/GaAs quantum wells. InGaAs quantum wells QWs have been of great interest in recent years due to the great potential applications of these materials in future generations of electronic and optoelectronic devices. The all binary structures are expected to have all the advantages of their ternary counterparts, plus several additional benefits related to growth, to the elimination of alloy disorder scattering and to the presence of a higher average indium content.
| Identifer | oai:union.ndltd.org:unt.edu/info:ark/67531/metadc278855 |
| Date | 12 1900 |
| Creators | Huang, Xuren |
| Contributors | Smirl, Arthur L., West, Bruce J., Littler, C. L., Mackey, H. J., Deering, William D., Mauldin, R. Daniel |
| Publisher | University of North Texas |
| Source Sets | University of North Texas |
| Language | English |
| Detected Language | English |
| Type | Thesis or Dissertation |
| Format | xii, 133 leaves: ill., Text |
| Rights | Public, Copyright, Copyright is held by the author, unless otherwise noted. All rights reserved., Huang, Xuren |
Page generated in 0.002 seconds