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InGaAs Quantum Dots Lasers by Varying the Composition of Cladding Layer

The purpose of this thesis is to fabricate the In0.75Ga0.25As quantum
dot (QD) lasers, and analyze the optical properties of laser devices to be
applied to optical fiber communication systems.
In laser materials, we grew 12-layer In0.75Ga0.25As QD strcutures by
molecular-beam epitaxy (MBE) with S-K mode on GaAs substrate, which
contains the cladding layer material Al0.5Ga0.5As (C433) Al0.25Ga0.75As
(C486) and Al0.2Ga0.8As (C485) of the three structures, the emission
wavelength of about 1.3£gm.
In the waveguide design, the design of 2.2£gm ridge width waveguide,
the purpose is to enable the single transmission mode in the waveguide,
so that smaller dispersion losses. Using ridge waveguide and cleaved
mirror as the formation of Fabry-Perot cavity laser.
In the quantum dot laser characteristic, C485 in the cavity length is
3000£gm of threshold current is 80mA with a slope efficiency of
41.88mW/A, the main emission Peak at 1201nm, the second Peak at
1197nm, the third Peak at 1182nm ; however C486 cavity length is
3300£gm of threshold current is 120mA with a slope efficiency of
27.44mW/A, the main emission Peak at 1215nm, the second Peak at
1205nm. C485 of the threshold current density is 1212 A/cm2, C486 of
the threshold current density is 1454 A/cm2.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0728110-114552
Date28 July 2010
CreatorsYen, Chung-Wei
ContributorsTsong-Sheng Lay, Chin-Ping Yu, Yi-Jen Chiu, Chien-Chung Lin, Jian-Jang Huang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728110-114552
Rightsnot_available, Copyright information available at source archive

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