In this thesis, we have set up a SiO2 sputter system. The system includes sputter gun, RF power supply, RF power controller, turbo pump, quick access door, cooling water tubes, gas lines, electric circuits etc. We applied sputter
techniques for quantum well intermixing (QWI) process.
We can adjust the pressure, gas, RF power etc. of the sputter system to fit the best QWI conditions and then sputter a SiO2 film on the samples. The samples with multiple quantum wells were grown by our team members using
molecular beam epitaxy system. After SiO2 film deposition, the samples were annealed by Rapid Thermal Process. The annealing temperatures are about 650¢J-750¢J. Following the thermal annealing, room-temperature PL measurements were used to study the blue shift and intensity change after QWI process.
After our hard working, we had fixed many problems of sputter system. We have obtained useful data through many QWI experiments. Our results are listed as follows :
PL intensity : We use RF power = 100W, sputter time = 5 min., annealing temperature = 675¢J, annealing time = 30 sec. PL intensity has been enhanced by 25 times.
Blue shift : there is no clear blue shift.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0722105-145216 |
| Date | 22 July 2005 |
| Creators | Cheng, Hong-Uong |
| Contributors | Hao-Chung Kuo, Tao-Yuan Chang, Ming-Hua Mao, Shoou-Jinn Chang, Tsong-Sheng Lay |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0722105-145216 |
| Rights | not_available, Copyright information available at source archive |
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