We have studied the electronic properties of AlxGa1-xN/GaN heterostructures by using Shubnikov¡Vde Haas(SdH) measurement. Two SdH oscillations were detected on the samples of x=0.35 and 0.31, due to the population of the first two subbands with the energy separations of 128 and 109 meV, respectively. For the sample of x=0.25, two SdH oscillations beat each other, probably due to a finite zero-field spin splitting. The spin-splitting energy is equal to 9.0 meV. The samples also showed a persistent photoconductivity effect after illuminating by blue light-emitting diode. For the part of experiment , we installed a "Regulator" on low temperature and high magnetic field system, in order to control the temperature of sample from 0.3K to 10K accurately. For the convenience of
SdH measurements at different tempertures.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0811103-121707 |
| Date | 11 August 2003 |
| Creators | Yao, Wen-Jiaw |
| Contributors | Ikai Lo, none, none |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0811103-121707 |
| Rights | unrestricted, Copyright information available at source archive |
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