A heterocyclic aromatic rigid-rod polymer poly-p-phenylene-benzobisoxazole (PBO) was applied as the opto-electronic layer¡Fand a conducting material of poly(3,4-ethylenedioxythio-phene):poly(4-styrenesulfonic acid) (PEDOT: PSS) was used as the hole transport layer. Aluminum (Al) and indium tin oxide (ITO) were served as device cathode and anode¡Arespectively, fabricated into a bi-layer structure of ITO/PEDOT:PSS/PBO/Al for electrical and luminescence responses.
This research demonstrated an increase of current density and a decrease of threshold voltage with a decrease of PBO layer thickness from 90 nm to 27 nm to facilitate electron tunneling and electron-hole recombination. With a lower spin coating speed, polymer chain would aggregate and inter-penetrate resulted in red-shift of electroluminescence (EL) emission spectrum. Furthermore, micro-cavity effect might influence EL spectrum by varying layer thickness. Modulation of PBO layer thickness led to tunable EL emission color.
It was also demonstrated that an increase of current density and a slightly decrease of threshold voltage with a PEDOT:PSS film thickness changing from 96 nm to 17 nm at a constant PBO layer thickness of 90 nm. Micro-cavity effect thus influenced EL emission for a tunable emission color.
Photolithography was applied to obtain ITO substrate of grating depth of periodic variation and then coated with a PEDOT:PSS leading to a grated PEDOT:PSS layer of periodic thickness. This led to ITO/PEDOT:PSS/PBO/Al device showing broadened EL emission spectra.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0712108-143645 |
| Date | 12 July 2008 |
| Creators | Tseng, Hua-wei |
| Contributors | S. J. Bai, J. H. Hsu, M. Chen, B. H. Tseng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712108-143645 |
| Rights | not_available, Copyright information available at source archive |
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