Tang Siu Kei. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2004. / Includes bibliographical references (leaves 107-111). / Abstracts in English and Chinese. / Acknowledgements --- p.ii / Abstract --- p.iii / List of Figures --- p.xi / List of Tables --- p.xvi / Chapter Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Overview of Electrostatic Discharge --- p.1 / Chapter 1.1.1 --- Classification of Electrostatic Discharge Models --- p.1 / Chapter 1.2 --- Electrostatic Discharge in CMOS RF Circuits --- p.4 / Chapter 1.3 --- Research Goal and Contribution --- p.6 / Chapter 1.4 --- Thesis Outline --- p.6 / Chapter Chapter 2 --- Performance Parameters of Amplifier --- p.8 / Chapter 2.1 --- Amplifier Gain --- p.8 / Chapter 2.2 --- Noise Factor --- p.9 / Chapter 2.3 --- Linearity --- p.11 / Chapter 2.3.1 --- 1-dB Compression Point --- p.13 / Chapter 2.3.2 --- Third-Order Intercept Point --- p.14 / Chapter 2.4 --- Return Loss --- p.16 / Chapter 2.5 --- Power Consumption --- p.18 / Chapter 2.6 --- HBM ESD Withstand Voltage --- p.19 / Chapter Chapter 3 --- ESD Protection Methodology for Low Noise Amplifier --- p.21 / Chapter 3.1 --- Dual-Diode Circuitry --- p.22 / Chapter 3.1.1 --- Working Principle --- p.22 / Chapter 3.1.2 --- Drawbacks --- p.24 / Chapter 3.2 --- Shunt-Inductor Method --- p.25 / Chapter 3.2.1 --- Working Principle --- p.25 / Chapter 3.2.2 --- Drawbacks --- p.27 / Chapter 3.3 --- Common-Gate Input Stage Method --- p.28 / Chapter 3.3.1 --- Built-in ESD Protecting Mechanism --- p.29 / Chapter 3.3.2 --- Competitiveness --- p.31 / Chapter Chapter 4 --- Design Theory of Low Noise Amplifier --- p.32 / Chapter 4.1 --- Small-Signal Modeling --- p.33 / Chapter 4.2 --- Method of Input Termination --- p.33 / Chapter 4.2.1 --- Resistive Termination --- p.34 / Chapter 4.2.2 --- Shunt-Series Feedback --- p.34 / Chapter 4.2.3 --- l/gm Termination --- p.35 / Chapter 4.2.4 --- Inductive Source Degeneration --- p.36 / Chapter 4.3 --- Method of Gain Enhancement --- p.38 / Chapter 4.3.1 --- Tuned Amplifier --- p.38 / Chapter 4.3.2 --- Multistage Amplifier --- p.40 / Chapter 4.4 --- Improvement of Reverse Isolation --- p.41 / Chapter 4.4.1 --- Common-Gate Amplifier --- p.41 / Chapter 4.4.2 --- Cascoded Amplifier --- p.42 / Chapter Chapter 5 --- Noise Analysis of Low Noise Amplifier --- p.44 / Chapter 5.1 --- Noise Sources of MOS Transistor --- p.44 / Chapter 5.2 --- Noise Calculation using Noisy Two-Port Network --- p.46 / Chapter 5.3 --- Noise Calculation using Small-Signal Model --- p.49 / Chapter 5.3.1 --- Low Noise Amplifier with Inductive Source Degeneration --- p.49 / Chapter 5.3.2 --- Common-Gate Low Noise Amplifier --- p.52 / Chapter Chapter 6 --- Design of an ESD-protected CMOS Low Noise Amplifier --- p.54 / Chapter 6.1 --- Design of DC Biasing Circuitry --- p.55 / Chapter 6.2 --- Design of Two-Stage Architecture --- p.57 / Chapter 8.3.1 --- Design of Common-Gate Input Stage --- p.57 / Chapter 8.3.2 --- Design of Second-Stage Amplifier --- p.59 / Chapter 6.3 --- Stability Consideration --- p.61 / Chapter 6.4 --- Design of Matching Networks --- p.62 / Chapter 6.4.1 --- Design of Inter-Stage Matching Network --- p.64 / Chapter 6.4.2 --- Design of Input and Output Matching Networks --- p.67 / Chapter Chapter 7 --- Layout Considerations --- p.70 / Chapter 7.1 --- MOS Transistor --- p.70 / Chapter 7.2 --- Capacitor --- p.72 / Chapter 7.3 --- Spiral Inductor --- p.74 / Chapter 7.4 --- Layout of the Proposed Low Noise Amplifier --- p.76 / Chapter 7.5 --- Layout of the Common-Source Low Noise Amplifier --- p.79 / Chapter 7.6 --- Comparison between Schematic and Post-Layout Simulation Results --- p.81 / Chapter Chapter 8 --- Measurement Results --- p.82 / Chapter 8.1 --- Experimental Setup --- p.82 / Chapter 8.1.1 --- Testing Circuit Board --- p.83 / Chapter 8.1.2 --- Experimental Setup for s-parameter --- p.84 / Chapter 8.1.3 --- Experimental Setup for Noise Figure --- p.84 / Chapter 8.1.4 --- Experimental Setup for 1-dB Compression Point --- p.85 / Chapter 8.1.5 --- Experimental Setup for Third-Order Intercept Point --- p.86 / Chapter 8.1.6 --- Setup for HBM ESD Test --- p.87 / Chapter 8.2 --- Measurement Results of the Proposed Low Noise Amplifier --- p.89 / Chapter 8.2.1 --- S-parameter Measurement --- p.90 / Chapter 8.2.2 --- Noise Figure Measurement --- p.91 / Chapter 8.2.3 --- Measurement of 1-dB Compression Point --- p.92 / Chapter 8.2.4 --- Measurement of Third-Order Intercept Point --- p.93 / Chapter 8.2.5 --- HBM ESD Test --- p.94 / Chapter 8.2.6 --- Summary of Measurement Results --- p.95 / Chapter 8.3 --- Measurement Results of the Common-Source Low Noise Amplifier --- p.96 / Chapter 8.3.1 --- s-parameter Measurement --- p.97 / Chapter 8.3.2 --- Noise Figure Measurement --- p.98 / Chapter 8.3.3 --- Measurement of 1-dB Compression Point --- p.99 / Chapter 8.3.4 --- Measurement of Third-Order Intercept Point --- p.100 / Chapter 8.3.5 --- HBM ESD Test --- p.101 / Chapter 8.3.6 --- Summary of Measurement Results --- p.102 / Chapter 8.4 --- Performance Comparison between Different Low Noise Amplifier Designs --- p.103 / Chapter Chapter 9 --- Conclusion and Future Work --- p.105 / Chapter 9.1 --- Conclusion --- p.105 / Chapter 9.2 --- Future Work --- p.106 / References --- p.107 / Author's Publications --- p.112
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_324883 |
| Date | January 2004 |
| Contributors | Tang, Siu Kei., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering. |
| Source Sets | The Chinese University of Hong Kong |
| Language | English, Chinese |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, xvii, 112 leaves : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
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