Investigation of physical and chemical interactions during etching of silicon in dual frequency capacitively coupled HBr/NF3 gas discharges

Description

Zugl.: Dresden, Techn. Univ., Diss., 2009 / Hergestellt on demand

Links & Downloads

1. http://d-nb.info/998661384/04
2. http://deposit.d-nb.de/cgi-bin/dokserv?id=3387239&prov=M&dok_var=1&dok_ext=htm

Tags

Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/551689988
Date	January 2009
Creators	Reinicke, Marco
Publisher	Dresden Techn. Univ.
Source Sets	OCLC
Language	English
Detected Language	English