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A study of reactively evaporated amorphous hydrogenated silicon & amorphous hydrogenated germanium and recrystallization of amorphous germanium by rapid thermal annealing method.

by Lui Kai Man, Raymond. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1993. / Includes bibliographical references (leaves 221-225). / Acknow1edgements / Abstract --- p.i / Table of Contents --- p.ii / Chapter Chapter 1 --- Introduction --- p.1 / Chapter Chapter 2 --- Sample Preparation --- p.12 / Chapter A. --- Introduction --- p.12 / Chapter B. --- The Working Systems --- p.12 / Chapter C. --- Sample Preparation --- p.14 / Chapter C.1 --- The Method Of Reactive Evaporation --- p.14 / Chapter C.2 --- The Method Of Posthydrogenation --- p.15 / Chapter D. --- The Substrates --- p.16 / Chapter Chapter 3 --- "Electrical Conductivities, Thermal and Optical Stability Experiments" --- p.21 / Chapter A. --- Introduction --- p.21 / Chapter B. --- Theory --- p.22 / Chapter B.1 --- Electronic Transport In Amorphous Semiconductor --- p.22 / Chapter B.2 --- dc Electrical Conductivity in Davis-Mott Model --- p.23 / Chapter B.3 --- Photoconductivity --- p.27 / Chapter B.4 --- Staebler-Wronski Effect --- p.28 / Chapter C. --- Experimental Method --- p.29 / Chapter C.1 --- Dark And Photo Conductivities Measurements --- p.29 / Chapter C.2 --- Optical Stability Measurement --- p.32 / Chapter C.3 --- Thermal Stability Measurement --- p.32 / Chapter D. --- Results --- p.34 / Chapter D.1 --- Reactively Evaporated Samples --- p.34 / Chapter D.2 --- Temperature Dependence Of Conductivities --- p.34 / Chapter D.3 --- Optical Stability Measurement --- p.35 / Chapter D.4 --- Thermal Stability Measurement --- p.36 / Chapter E. --- Discussions --- p.36 / Chapter E.1 --- Electrical Properties Of Reactively Evaporated a-Si:H --- p.36 / Chapter E.2 --- A Comparative Study Between Reactive Evaporated Samples With Those From Other Reactive Deposition Techniques And Glow-Discharge Process --- p.37 / Chapter F. --- Conclusions --- p.38 / Chapter Chapter 4 --- Infrared Absorption Experiment --- p.63 / Chapter A. --- Introduction --- p.63 / Chapter A.1 --- General Description --- p.63 / Chapter A.2 --- Types Of Atomic Vibrations --- p.64 / Chapter A.3 --- Infrared Spectroscopy Of a-Si:H --- p.64 / Chapter A.4 --- Effect Of Substrate Temperature On Bonding Configuration --- p.65 / Chapter B. --- Experimental Method --- p.66 / Chapter C. --- Results --- p.66 / Chapter D. --- Discussions --- p.67 / Chapter D.1 --- Identification Of The Two Absorption Bands --- p.67 / Chapter D.2 --- Effect Of Substrate Temperature --- p.68 / Chapter E. --- Conclusions --- p.70 / Chapter Chapter 5 --- Electron Spin Resonance Experiment --- p.82 / Chapter A. --- Introduction --- p.82 / Chapter B. --- Theory --- p.85 / Chapter B. 1 --- The Absorption Process --- p.85 / Chapter B. 2 --- The Relaxation Process --- p.86 / Chapter C. --- Experimental Method --- p.90 / Chapter D. --- Results --- p.92 / Chapter E. --- Discussions --- p.93 / Chapter F. --- Conclusions --- p.96 / Chapter Chapter 6 --- Optical Absorption Experiment --- p.114 / Chapter A. --- Introduction --- p.114 / Chapter B. --- Theory On Optical Transitions Within Amorphous Materials --- p.114 / Chapter B.1 --- General Descriptions --- p.114 / Chapter B.2 --- Band Models For Optical Absorptions In An Amorphous Semiconductor --- p.116 / Chapter C. --- Experimental Method --- p.121 / Chapter E. --- Analysis --- p.123 / Chapter E.1 --- Band Model --- p.123 / Chapter E.2 --- Deconvolution Of Absorption Spectrum --- p.124 / Chapter F. --- Discussions --- p.131 / Chapter G. --- Conclusions --- p.133 / Appendix A --- p.134 / Chapter A.1 --- An Outline On The Theoretical And Experimental Aspects Of PDS --- p.134 / Chapter Chapter 7 --- Recrystallization Of Amorphous Germanium By Rapid Thermal Annealing --- p.165 / Chapter A. --- Introduction --- p.165 / Chapter B. --- Theory --- p.166 / Chapter B.1 --- Recrystallization Of Amorphous Germanium --- p.166 / Chapter B.2 --- Nucleation And Growth - Isothermal Transformation --- p.167 / Chapter B.3 --- The Structure Of Polycrystalline Aggregates By X-ray Analysis --- p.170 / Chapter C. --- Experimental Set-ups --- p.172 / Chapter C. 1 --- The Rapid Thermal Processing Unit --- p.172 / Chapter C. 2 --- The Conventional Furnace --- p.175 / Chapter C. 3 --- The X-ray Diffractometer --- p.175 / Chapter C. 4 --- Electrical Conductivity Measurements --- p.176 / Chapter D. --- Experimental Method --- p.177 / Chapter D.1 --- The Samples --- p.177 / Chapter D.2 --- The Experiments --- p.177 / Chapter E. --- Results And Discussions --- p.178 / Chapter F. --- Conclusions --- p.185 / Appendix A --- p.216 / Chapter Chapter 8 --- Conclusions --- p.217 / Chapter A. --- Conclusions --- p.217 / Chapter B. --- Suggestions On Improvement And Further Development Of The Present Systems --- p.219 / References --- p.221

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_319223
Date January 1993
ContributorsLui, Ka Man Raymond., Chinese University of Hong Kong Graduate School. Division of Physics.
PublisherChinese University of Hong Kong
Source SetsThe Chinese University of Hong Kong
LanguageEnglish
Detected LanguageEnglish
TypeText, bibliography
Formatprint, iv, 225 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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