Ferroelectricity is very attractive for nonvolatile memories since it allows non-volatility paired with a field driven switching mechanism enabling a very low-power write operation. Non-volatile memories based on ferroelectric lead-zirconium-titanate (PZT) (see fig. la) are available on the market for more than a quarter of a century now [1]. Yet they are limited to niche applications due to the compatibility issues of the ferroelectric material with CMOS processes and the associated limited scalability [2]. The discovery of ferroelectricity in doped hafnium oxide has revived the activities towards a variety of scalable ferroelectric nonvolatile memory devices
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:77577 |
| Date | 26 January 2022 |
| Creators | Mikolajick, T., Mulaosmanovic, H., Hoffmann, M., Max, B., Mittmann, T., Schroeder, U., Slesazeck, S. |
| Publisher | IEEE |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 978-1-72812-112-3, 10.1109/DRC46940.2019.9046455 |
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