Resistivity and photoconductivity measurements have been made, using hydrostatic pressures up to 75 kb on localised states in some III - V semiconductors, including ones with transition metal ions present. The systems investigated were GaAs: Sn, GaAs: Cr: S, n - In[x] G[1-x] As[y] P[1-y], InP: Fe and GaAs: Cr. Many electronic transitions involving localised states (some deep in the band gap) appear to have anomolously high pressure coefficients. Possible explanations are discussed.
| Identifer | oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:377272 |
| Date | January 1987 |
| Creators | Wadley, Nicholas James |
| Publisher | University of Surrey |
| Source Sets | Ethos UK |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
| Source | http://epubs.surrey.ac.uk/848534/ |
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