In this thesis, we focus on the investigation of semiconductor optical amplifier and ring laser. We use InP based multiple quantum well epi-wafer with modulation doping in the active layer to design the semiconductor optical amplifier and ring laser for the optical communication at 1.55£gm wavelength. We combine the concept of Loop Mirror and Asymmetric Mach-Zehnder Interferometer to obtain the laser with good side mode suppression for a single wavelength light source. For the semiconductor optical amplifier, we design two different types, one is the Fabry-Perot Amplifier and the other is the Traveling Wave Amplifier. Furthermore, We use the Multi-Step Undercutting process in the fabrication of these two devices.
We have established an optical measurement system, including the L-I measurement, the optical spectrum measurement and the far field measurement, to test the device parameters.
After annealing, these devices with two different serial number exhibited the contact resistances of 9£[ and 16£[, respectively. Under CW operation, these FPA exhibited the threshold current of 62mA and 70mA at 20¢J, respectively. The stimulated emission wavelength was at 1531nm and 1522nm, respectively.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0710106-212417 |
| Date | 10 July 2006 |
| Creators | Chen, Jheng-de |
| Contributors | wen-Jeng Ho, Wood-Hi Cheng, Tsong-Sheng Lay, Tao-Yuan Chang, Tzong-Yow Tsai |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710106-212417 |
| Rights | not_available, Copyright information available at source archive |
Page generated in 0.002 seconds