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Fabrication and characterization of high-speed through silicon via

The target of this thesis is to fabricate through Silicon via (TSV) structures based on Si-bench technology for high-speed transmission interface. In this process, Si via with a depth of 250 £gm were formed by dry etching on a 500 £gm thick <111> Si wafer. The TSV were then obtained by removing the bottom of the silicon wafer using grinding technique. To reduce microwave loss of high frequency signal transmission, we oxidized the TSV by oxygen wet oxidation at a temperature of 1000 oC. Finally, conductive paths through the TSV were formed by filling silver epoxy into the via and dry at a temperature of 200 oC for 1 hour. The s parameters of the high speed TSV structure was characterized by a Vector Network Analyzer. Si-bench technology can effectively improve system integration and performance while reducing cost and size of the module package.
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Key words: Through silicon via, microwave loss, s parameters

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0728112-031923
Date28 July 2012
CreatorsHuang, Shu-Ting
ContributorsTing-Chang Chuang, Yi-Jen Chiu, Chao-Kuei Lee, Ann-Kuo Chu
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728112-031923
Rightsuser_define, Copyright information available at source archive

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