<p><p>In this work growth of cubic GaN in the selective area (SA) MOVPE process is</p><p>simulated. The simulations are restricted to small pattern SA MOVPE growth.</p><p>In this case the traditional MOVPE growth and the enhanced growth caused by</p><p>surface diffusion are important growth factors. The lateral vapor phase diffusion</p><p>is ignored while this process only has a small impact on the enhanced growth in</p><p>the small pattern SA growth. The model is build for simulation of anisotropic</p><p>growth. It has been shown that different type of anisotropic growth occurs when</p><p>the mask pattern are orientated in different directions on the substrate. While</p><p>the anisotropic growth is not well understood two different models are studied in</p><p>this work.</p><p>The simulation is restricted to the geometrical growth characteristics such</p><p>as mask and crystal width, mask alignment and surface diffusion on the crystal.</p><p>The reactor geometry, pressure and growth temperature are not investigated that</p><p>closely and are only treated as constants in the model.</p><p>The model used in this simulation gives good results for short time simulations</p><p>for some certain cases. The model shows that the fill factor has a greater</p><p>impact on the grown shapes than the individual mask and crystal width. But</p><p>there are problems with the anisotropic and flux from mask modeling while some</p><p>facets do not appear and the lateral growth along the mask show doubtful results.</p><p>The model show good results in short time growth and predict some important</p><p>characteristics in SA MOVPE.</p></p>
| Identifer | oai:union.ndltd.org:UPSALLA/oai:DiVA.org:liu-17682 |
| Date | January 2009 |
| Creators | Nilsson, Daniel |
| Publisher | Linköping University, Department of Physics, Chemistry and Biology |
| Source Sets | DiVA Archive at Upsalla University |
| Language | English |
| Detected Language | English |
| Type | Student thesis, text |
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