Pure m-plane p-GaN/InGaN/n-GaN on the m-sapphire grown by plasma assisted molecular beam epitaxy (PAMBE) had been achieved. V/III ratio of the first layer m-plane GaN is 20 and growth temperature is 665 ¢XC. ¢½/¢» ratio and the growth temperature are the most important factors in the growth sequence. M-InGaN film with better crystal quality was grown successfully by tuning these two factors. We have obtained a narrow window for epitaxial growth of m-plane InGaN/GaN on m-sapphire at 450 ¢XC. The striated surface is along (1120) a-axis direction of m-InGaN epilayer. As the growth temperature is increased further to 550 ¢XC, there is no InGaN signal from x-ray diffraction (XRD). We study the effect of growth condition on the structural properties and morphology of these films using high-resolution x-ray diffractometer (XRD) and scanning electron microscopy (SEM)
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0809111-152441 |
| Date | 09 August 2011 |
| Creators | Chou, Tsung-Yi |
| Contributors | Shih-Wei Feng, Quark Chen, Li-Wei Tu, Wang-Chuang Kuo, Der-Jun Jang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809111-152441 |
| Rights | user_define, Copyright information available at source archive |
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