The samples this thesis investigated were m-plane nitrides films grown on m-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE). Scanning electron microscopy (SEM) images revealed the surface morphologies of the films and thicknesses of the films were measured by cross-sectional scanning electron microscopy. Then we used electron back-scattered diffraction (EBSD) and X-ray diffraction (XRD) to check the growth orientation of the films. The m-plane nitrides films have the anisotropic optical properties were due to the growth orientation of the films. The films are under anisotropic stress since they were grown along m-axis and hence change the electron band structure (EBS), which resulted in anisotropic optical property. We studied the polarization properties of the luminescence at 15 K and 300 K by polarization dependent photoluminescence (PL) and calculated the degree of polarization. And then measured the strain of the m-plane nitrides films by micro-Raman spectroscopy, discussed the degree of polarization and stress. The degree of polarization larger as the anisotropic stress of the film increased.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0823111-145558 |
| Date | 23 August 2011 |
| Creators | Chang, Chu-ya |
| Contributors | Der-Jun Jang, Shih-Wei Feng, Yung-Sung Chen, Li-Wei Tu, Wang-Chuang Kuo |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0823111-145558 |
| Rights | user_define, Copyright information available at source archive |
Page generated in 0.0022 seconds