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Growing of GaN on vicinal SiC surface by molecular beam epitaxy /

Thesis (Ph. D.)--University of Hong Kong, 2002. / Includes bibliographical references (leaves 68-71).

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/52238042
Date January 2002
CreatorsCheung, Sau-ha.
PublisherHong Kong : University of Hong Kong,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceView the Table of Contents & Abstract

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