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Fabrication of Buried Heterostructure Spot-Size Converter Lasers

We present the fabrication of InGaAsP/InP buried heterostructure spot-size converter lasers. In the lateral conversion, we use photolithography to make tapered ridge waveguides. In the vertical conversion, we use a pair of step-index passive waveguides, namely guard waveguides (GWs), in the two sides of the step-index active waveguide region to increase optical-field profile. In order to decrease leakage current, we use a p-n-p current blocking structure by MOCVD regrowth. From numerical simulations, the far-field divergence is 21x21.
The step-index GW structure shows an internal efficiency of 63%. However, the BH lasers did not lase from our fabrication processes. From the I-V characteristics, a large leakage current has bypassed through the blocking structure. The reason may relate to the high background doping concentration of our MOCVD growth.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0811100-151054
Date11 August 2000
CreatorsWu, Tsung-Hsien
ContributorsWood-Hai Cheng, Tsong-Sheng Lay, Tien-Tsung Shih, Szu-Chun Wang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0811100-151054
Rightsnot_available, Copyright information available at source archive

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