ABSTRACT
In this thesis we deposit GaN films by magnetron rf sputtering with changes substrate temperature.
The electron probe microscope analysis ( EPMA ), scanning electron microscope ( SEM ),
photoluminescence measurement ( PL ) and X-ray diffraction ( XRD ) had been used to
investigate these GaN films. We find GaN films crystalline quality deposit at low temperature is
better then deposit at high temperature. From EPMA analysis we know higher substrate
temperature lower oxygen amount of film. The ratio of Ga to N is 1.18 ~ 1.83 in average.
The growth rate is about 0.30 £gm/h ~ 0.35 £gm/h in average. Thus changes substrate
temperature do not influence growth rate obviously. From SEM and EDS analysis we find the
roughness magnitude of films growth on sapphire substrate was smaller than the films
growth on silicon substrate. We also find lower substrate temperature the roughness magnitude
of films larger on silicon substrate.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0705100-113701 |
| Date | 05 July 2000 |
| Creators | Hsu, Kuo-Chou |
| Contributors | I-Kai Lo, Li-Wei, Yan-Ten Lu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705100-113701 |
| Rights | unrestricted, Copyright information available at source archive |
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