by Kwok-fung Kan = 低能量氬離子濺射於表面淸潔及高解像深度剖析時所產生的損傷及離子混合的硏究 / 簡國豐. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2000. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Kwok-fung Kan = Di neng liang ya li zi jian she yu biao mian qing jie ji gao jie xiang shen du pou xi shi suo chan sheng de sun shang ji li zi hun he de yan jiu / Jian Guofeng. / Abstract --- p.ii / 論文摘要 --- p.iii / Acknowledgement --- p.iv / Table of Contents --- p.v / List of Figures --- p.ix / List of Tables --- p.xi / Chapter Chapter 1 --- Background and Goals of the Thesis Work --- p.1 / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.1.1 --- Surface contamination of semiconductors --- p.1 / Chapter 1.1.2 --- Common surface cleaning methods --- p.2 / Chapter 1.1.3 --- Quality control in ultrathin gate dielectrics --- p.3 / Chapter 1.1.4 --- High-resolution depth profiling --- p.5 / Chapter 1.2 --- Energy range limitation in sputtering --- p.5 / Chapter 1.3 --- Goals of this thesis study --- p.6 / References for Chapter1 --- p.7 / Chapter Chapter 2 --- Theoretical Background and Instrumentation --- p.9 / Chapter 2.1 --- Ion Bombardment --- p.9 / Chapter 2.1.1 --- Bombardment mechanism --- p.9 / Chapter 2.1.2 --- Ion beam induced damage --- p.10 / Chapter 2.1.2.1 --- Region of damage --- p.10 / Chapter 2.1.2.2 --- Structural changes --- p.11 / Chapter 2.1.3 --- Assessment methods on ion beam damage and ion mixing --- p.12 / Chapter 2.1.3.1 --- Assessment methods on ion beam damage --- p.12 / Chapter 2.1.3.2 --- Assessment of ion mixing in the sample --- p.13 / Chapter 2.1.4 --- Minimizing the sputtered damage and ion mixing --- p.14 / Chapter 2.1.5 --- Ion gun --- p.15 / Chapter 2.1.5.1 --- Mechanism of the generation of an argon ion beam --- p.15 / Chapter 2.1.5.2 --- Description of ion gun --- p.16 / Chapter 2.1.5.3 --- Calibration of current density provided by the ion gun --- p.16 / Chapter 2.1.5.4 --- Sputtering time --- p.16 / Chapter 2.2 --- X-ray photoelectron spectroscopy(XPS) --- p.18 / Chapter 2.2.1 --- Principle of XPS --- p.18 / Chapter 2.2.1.1 --- Qualitative analysis of XPS --- p.18 / Chapter 2.2.1.2 --- Quantitative analysis of XPS --- p.20 / Chapter 2.2.2 --- Angle-resolved XPS --- p.24 / Chapter 2.2.3 --- Set-up --- p.25 / Chapter 2.2.3.1 --- UHV system --- p.27 / Chapter 2.2.3.2 --- X-ray source --- p.27 / Chapter 2.2.3.3 --- Electron energy analyser --- p.27 / Chapter 2.2.3.4 --- Detector --- p.28 / Chapter 2.2.4 --- Calibration of XPS --- p.28 / References for Chapter2 --- p.29 / Chapter Chapter 3 --- Damages induced by ion sputtering --- p.31 / Chapter 3.1 --- Introduction --- p.31 / Chapter 3.2 --- Experimental --- p.31 / Chapter 3.2.1 --- Sample preparation --- p.31 / Chapter a. --- Surface cleaning and oxidization --- p.31 / Chapter b. --- HF etching --- p.32 / Chapter c. --- Indium back contact --- p.32 / Chapter 3.2.2 --- XPS analysis --- p.33 / Chapter 3.2.2.1 --- Data acquisition --- p.33 / Chapter 3.2.2.2 --- Peak deconvolution --- p.33 / Chapter 3.2.3 --- Ion sputtering --- p.34 / Chapter 3.3 --- Results and discussion --- p.34 / Chapter 3.3.1 --- Spectral width of In3d and P2p peak --- p.34 / Chapter 3.3.2 --- Deconvolution of In3d signal at take-off angle of 90° --- p.37 / Chapter 3.3.2.1 --- In in bulk InP --- p.37 / Chapter 3.3.2.2 --- In metal --- p.37 / Chapter 3.3.2.3 --- In in damaged InP region --- p.37 / Chapter 3.3.3 --- Deconvolution of P2p signal at take off angle of 45° --- p.37 / Chapter 3.3.3.1 --- P in bulk InP --- p.37 / Chapter 3.3.3.2 --- P in damaged InP region --- p.37 / Chapter 3.3.4 --- Relative composition of deconvoluted components --- p.38 / Chapter 3.3.5 --- Fermi level shift --- p.39 / Chapter 3.3.6 --- Analysis at take-off angle of 45° --- p.40 / Chapter 3.3.7 --- Stoichiometry in sputtered InP --- p.43 / Chapter 3.4 --- Conclusions --- p.45 / References for Chapter3 --- p.46 / Chapter Chapter 4 --- Ion mixing in sputtered depth profiling --- p.47 / Chapter 4.1 --- Introduction --- p.47 / Chapter 4.2 --- Experimental --- p.47 / Chapter 4.2.1 --- Sample description --- p.47 / Chapter 4.2.2 --- Acquisition conditions --- p.47 / Chapter 4.2.3 --- Raw data --- p.48 / Chapter 4.2.4 --- Data treatments --- p.48 / Chapter 4.2.4.1 --- Depth calibration --- p.48 / Chapter 4.2.4.2 --- Calibration procedure --- p.55 / Chapter A. --- Overlayer region --- p.55 / Chapter B. --- Substrate region --- p.56 / Chapter 4.3 --- Results and discussions --- p.57 / Chapter 4.3.1 --- Study of ion mixing using depth profile --- p.57 / Chapter A. --- Comparing the carbon profiles at two ion sputtering energies --- p.59 / Chapter B. --- Comparing the nitrogen profiles at two ion sputtering energies --- p.59 / Chapter C. --- Comparing the oxygen profiles at two ion sputtering energies --- p.59 / Chapter 4.3.2 --- Study of ion mixing from a change in sputtering rate --- p.60 / Chapter 4.3.3 --- Approximation on ion mixing --- p.64 / Chapter 4.3.4 --- Conclusions --- p.66 / References for Chapter4 --- p.67 / Chapter Chapter 5 --- Conclusions --- p.68
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_323066 |
| Date | January 2000 |
| Contributors | Kan, Kwok-fung., Chinese University of Hong Kong Graduate School. Division of Physics. |
| Source Sets | The Chinese University of Hong Kong |
| Language | English, Chinese |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, xi, 69 leaves : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
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