Semiconducting material CdTe/CdZnTe has a huge application potential in spectroscopic room temperature radiation detection due to its properties. Such detectors can be used in medical applications, homeland security and for monitoring of nuclear facilities. However, the final device quality is influenced by many parameters. One crucial stage in detector fabrication is the proper surface treatment. The detailed study of surface treatments and their effect on final detector device is reported. Another crucial fact is the polarization of the detector caused by high radiation fluxes which negatively affects the use of such devices. The polarization occurs by capturing the photogenerated holes at the deep levels inside the semiconductor. The possible detector depolarization by infrared illumination during the detector operation has been experimentally verified and the obtained results are shown in this thesis. For optimal technology of preparation, it is also necessary to develop the fast characterization method for prepared detectors. The last aim of the thesis is to study the resulting quality of prepared planar and co-planar detectors by transient-current-technique (TCT). TCT is an electro-optical method allowing to determine variety of transport properties of radiation detectors, such as internal electric...
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:368070 |
| Date | January 2017 |
| Creators | Pekárek, Jakub |
| Contributors | Belas, Eduard, Oswald, Jiří, Štekl, Ivan |
| Source Sets | Czech ETDs |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/doctoralThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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