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Investigation of electrically-active defects in AlGaN/GaN high electron mobility transistors by spatially-resolved spectroscopic scanned probe techniques.

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1. http://rave.ohiolink.edu/etdc/view?acc_num=osu1373894407

Identifer	oai:union.ndltd.org:OhioLink/oai:etd.ohiolink.edu:osu1373894407
Date	16 September 2013
Creators	Cardwell, Drew
Publisher	The Ohio State University / OhioLINK
Source Sets	Ohiolink ETDs
Language	English
Detected Language	English
Type	text
Source	http://rave.ohiolink.edu/etdc/view?acc_num=osu1373894407
Rights	unrestricted, This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.