A theory is developed to explain the dependence of carrier transport in a thin semiconducting film on film thickness, magnetic field strength, and the dominant bulk scattering mechanism. This theory is based on the solution of the linearized Boltzmann equation in relaxation time form. The semiconductor is assumed to be bounded and nondegenerate with spherical energy surfaces and a scalar effective mass, It is also assumed to be flat banded with totally diffuse scattering at the surface. Classical Boltzmann statistics are used for equilibrium. The dependence of the relaxation time on the carrier energy is approximated by a power law equation. The principle improvement over similar theories is the treatment of the dependence of the relaxation time on carrier energy. The power law approximation for this dependence is valid for randomizing and elastic scattering mechanisms.
| Identifer | oai:union.ndltd.org:unt.edu/info:ark/67531/metadc330868 |
| Date | 08 1900 |
| Creators | Smith, V. Devon (Vernon Devon) |
| Contributors | Deering, William D., Redding, Rogers W., Sybert, J. R., Seiler, David G., Mackey, H. J. |
| Publisher | North Texas State University |
| Source Sets | University of North Texas |
| Language | English |
| Detected Language | English |
| Type | Thesis or Dissertation |
| Format | vii, 170 leaves: ill., Text |
| Rights | Public, Smith, V. Devon (Vernon Devon), Copyright, Copyright is held by the author, unless otherwise noted. All rights reserved. |
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