A study of the nature of the Schottky barrier during ultralow coverage stages of GaAs(110)/Al and GaAs(110)/In interface formation

Description

Thesis (Ph. D.)--University of Wisconsin--Madison, 1984. / Typescript. Vita. eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references (leaves 129-137).

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Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/609232980
Date	January 1984
Creators	Daniels, Robert R.
Source Sets	OCLC
Language	English
Detected Language	English