We haved studied the magneto-transport properties of two dimensional electron gas (2DEG) in Si £_-doped In0.22Ga0.78As/AlGaAs single quantum wells ( QWs ) by using Shubnikov-de Haas ( SdH ) measurements . From the SdH measurement , we can clearly observe the SdH oscillations and obtain the SdH frequencies. It indicates the 2DEG in these QWs was confirmed . We also obtain the deep level binding energies¡G 104.4 meV and 9.6 meV for sample 1 and 50.2meV for sample2 by T-dependent Van der Pauw Hall effect measure- ment at magnetic field 0.3T. The difference of these two samples was the In0.1Ga0.9As layer of sample 2 was inserted between In0.22Ga0.78As well and the GaAs spacers . So in this paper , we tried to propose a model to interpret the deep-level traps in the QWs and studied the effect of In0.1Ga0.9As inserted-layer on the In0.22Ga0.78As/GaAs Single Quantum Wells.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0629104-154102 |
| Date | 29 June 2004 |
| Creators | Lian, Jau-Rung |
| Contributors | Yan-ten Lu, Ikai Lo, Li-wei Tu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-154102 |
| Rights | unrestricted, Copyright information available at source archive |
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