We have studied the electronic properties of InGaAs/AlInAs nano wire by using Shubnikov-de Hass (SdH)measurement at 0.3K.In order to study the effect of the channel width on the 2DEG,we made the nanometer-scaled 2DEG channels varied with different widths from 700 nm to 1400 nm by focus ion beam. On the AlGaAs/AlInAs nanowires we have studied I-V characteristics with gate-voltage and observed the work range from -3 V to 3 V. After illuminating at 0.3 K, the carrier density of the sample InGaAs-1400 nm increased and observed the persistent photoconductivity effect. After SdH measurement at 0.3 K, we found saturation current of these samples at 77 K but did not observe change with different gate voltage.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0718108-185757 |
| Date | 18 July 2008 |
| Creators | Chiu, Wan-ting |
| Contributors | Jih-Chen Chiang, Ikai Lo, Ming-Kwei Lee |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-185757 |
| Rights | withheld, Copyright information available at source archive |
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