We have fabricated the device of High Electron Mobility Transistor(HEMT) on Al0.18Ga0.82N/GaN heterostructures. The mobility of 2DEG of the AlGaN/GaN is 9328 cm2/Vs and carrier concentration is 7.917 1012 cm-2 obtained by conventional van der pauw Hall measurement at temperature of 77 K. We made the conducting channel of nanometer wires on the AlGaN/GaN heterostructures for researching low-dimensional transport of two-Dimensional Electron Gas by gate controlled. From the SdH measurement, we can clearly observe the SdH oscillations and obtain the SdH frequencies. For the sample of 0922GaN-200 nm and 0922GaN-100 nm at 0.39 K,two constituted peaks of Gauss¡¦s function were fitted by Non-linear Curve and Two SdH oscillations beat each other, probably due to spin-splitting. However, we can¡¦t discover any trend in the experiment of gate controlled. In the future, we will try to improve the quality and discover the suitable depth of SiO2.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0718108-211011 |
| Date | 18 July 2008 |
| Creators | Hsin Lin, Wei |
| Contributors | Ming-Kwei Lee, Ikai Lo, Jih-Chen Chiang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011 |
| Rights | withheld, Copyright information available at source archive |
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