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Position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy / A versatile approach towards semipolar GaN and the characterization of single nanocolumns

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Identiferoai:union.ndltd.org:uni-goettingen.de/oai:ediss.uni-goettingen.de:11858/00-1735-0000-0022-609E-3
Date29 November 2013
CreatorsUrban, Arne
ContributorsRizzi, Angela Prof. Dr.
Source SetsGeorg-August-Universität Göttingen
LanguageEnglish
Detected LanguageEnglish
TypedoctoralThesis

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