This thesis deals with deposition of GaN thin films and GaN selective growth utilizing pyrolyzed resist masks. Carbon masks were prepared on silicon substrates by electron-beam litography and resist pyrolysis. As a further step, Ga and GaN were deposited on the masked substrates by Moleculer Beam Epitaxy (MBE) method. A selective growth of Ga droplets was achieved. These results were used for preparation of GaN crystallites by pulse deposition. It is also shown that direct MBE deposition of GaN on the masked substrates leads to a selective growth of GaN thin films with GaN film growing only on the areas which are not covered by the carbon mask. The results are explained by enhanced surface diffusion of gallium atoms on the surface of the carbon mask.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:230858 |
| Date | January 2013 |
| Creators | Novák, Tomáš |
| Contributors | Kostelník, Petr, Voborný, Stanislav |
| Publisher | Vysoké učení technické v Brně. Fakulta strojního inženýrství |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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