This thesis deals with deposition of gallium nitride thin films on silicon substrates covered by negative HSQ rezist. Rezist was patterned via electron beam lithography to create masks, where the selective growth of crystals was achieved. Growth of GaN layers was carried out by MBE method. For achievement of desired selective growth, the various deposition conditions were studied.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:232076 |
| Date | January 2015 |
| Creators | Knotek, Miroslav |
| Contributors | Novák, Tomáš, Voborný, Stanislav |
| Publisher | Vysoké učení technické v Brně. Fakulta strojního inženýrství |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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