The submitted work deals with the methods for manufacturing and analysis of contacts on crystalline silicon solar cells. It is focused on selective processes for the production of solar cells metal contacts. The masking feature of silicon nitride is used for selective silicon etching, selective phosphorus diffusion and selective electro-less nickel deposition. Properties of metal contacts precursors are investigated using optical microscopy and their electrical properties using methods based on a four-point probe method. Results are used for the manufacturing of silicon, solar cell with an innovative type of the structure of the front side metallization: chemical nickel, conductive adhesive and copper wire. This approach allows to reduce shading of the front area of PV cells with the ability to avoid usage of busbars. The another advantage of this approach is in replacement of costly silver in at least 2/3 cross section of the front side metallization. Selective ablation of silicon nitride layer was conducted by means of IR laser beam.
Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:233590 |
Date | January 2013 |
Creators | Hladík, Jiří |
Contributors | Sládek, Petr, Myslík, Vladimír, Szendiuch, Ivan |
Publisher | Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií |
Source Sets | Czech ETDs |
Language | Czech |
Detected Language | English |
Type | info:eu-repo/semantics/doctoralThesis |
Rights | info:eu-repo/semantics/restrictedAccess |
Page generated in 0.0015 seconds