In this paper, we propose a novel thin film MOSFET with source/drain tie and discontinuously block oxide layers. Improving process is very important, when the gate length of SOI MOSFET is reduced. To overcome the misalignment problem, we use self-aligned technology to fabricate this device. In addition, the device has discontinuously block oxide layers; they can improve short channel effects, reduce the parasitic capacitance, and decrease the leakage current cause by P-N junction between source/drain and body regions. They also supply two pass ways to eliminate carriers and heat which generated by impact ionization resulting in suppression of floating-body effect and self-heating effect. In addition, these two pass ways can be seen as the parallel equivalent resistance results in a reduced series resistance and an increased drain saturation current. According to the ISE TCAD 10.0 simulation results, the discontinuously block oxide layers can not only improve the short channel effects, but also eliminate the floating-body effect and diminish the self-heating effect because of the pass ways.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0810109-154308 |
| Date | 10 August 2009 |
| Creators | Kang, Shiang-Shi |
| Contributors | Chun-Hsing shih, James B. Kuo, Jyi-Tsong Lin, Wen-Kuan Yeh, Yao-Tsung Tsai |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810109-154308 |
| Rights | withheld, Copyright information available at source archive |
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