Return to search

Fundamental understanding, characterization, passivation and gettering of electrically active defects in silicon

No description available.

1. http://hdl.handle.net/1853/15710
2. 423412

Identifer	oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/15710
Date	05 1900
Creators	Doolittle, William Alan
Publisher	Georgia Institute of Technology
Source Sets	Georgia Tech Electronic Thesis and Dissertation Archive
Detected Language	English
Type	Dissertation
Rights	Access restricted to authorized Georgia Tech users only.