Two MOS-Bipolar composite power semiconductor switching devices are proposed and experimentally demonstrated. These devices feature high voltage and high current capabilities, fast switching speeds, simple gate drive requirements, savings in chip area, reverse bias second breakdown ruggedness and large safe operating areas. Application characteristics of the devices for high frequency power inverter circuits are discussed. Monolithic integration of the two composite devices are also proposed. / Ph. D.
| Identifer | oai:union.ndltd.org:VTETD/oai:vtechworks.lib.vt.edu:10919/54275 |
| Date | January 1985 |
| Creators | Chin, Shaoan |
| Contributors | Electrical Engineering, Chen, De Yu "Dan", Lee, Fred, Burton, Larry C., Stephenson, F. William, Rutland, Leon W. Jr. |
| Publisher | Virginia Polytechnic Institute and State University |
| Source Sets | Virginia Tech Theses and Dissertation |
| Language | en_US |
| Detected Language | English |
| Type | Dissertation, Text |
| Format | xvi, 228 leaves, application/pdf, application/pdf |
| Rights | In Copyright, http://rightsstatements.org/vocab/InC/1.0/ |
| Relation | OCLC# 14545416 |
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