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Photoluminescent properties of annealed ZnCdSe epitaxial layers on InP substrates =: 磷化銦上鋅鎘硒外延層退火處理後的光致發光性質. / 磷化銦上鋅鎘硒外延層退火處理後的光致發光性質 / Photoluminescent properties of annealed ZnCdSe epitaxial layers on InP substrates =: Lin hua yin shang xin ke xi wai yan ceng tui huo chu li hou de guang zhi fa guang xing zhi. / Lin hua yin shang xin ke xi wai yan ceng tui huo chu li hou de guang zhi fa guang xing zhi

by Wong Kin Sang. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1998. / Includes bibliographical references (leaves 61-62). / Text in English; abstract also in Chinese. / by Wong Kin Sang. / Table of contents --- p.I / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Interest in ZnxCd1-x Se/InP --- p.1 / Chapter 1.2 --- Conditions of thermal annealing --- p.2 / Chapter 1.3 --- Advantages of using photoluminescence (PL) --- p.3 / Chapter 1.4 --- Our work --- p.4 / Chapter Chapter 2 --- Experimental setup and procedures / Chapter 2.1 --- PL measurements --- p.6 / Chapter 2.1.1 --- Setup --- p.6 / Chapter 2.1.2 --- Types of PL measurements --- p.6 / Chapter 2.2 --- Annealing experiments --- p.8 / Chapter 2.2.1 --- Setup --- p.8 / Chapter 2.2.2 --- Types of annealing --- p.10 / Chapter 2.2.3 --- Procedures --- p.11 / Chapter Chapter 3 --- Results and discussions / Chapter 3.1 --- Room temperature PL studies of ZnxCd1-xSe/InP --- p.12 / Chapter 3.1.1 --- As-grown ZnxCd1-x Se/InP --- p.12 / Chapter 3.1.1.1 --- Peak energy vs concentration --- p.12 / Chapter 3.1.2 --- Annealing studies --- p.15 / Chapter 3.1.2.1 --- Isothermal annealing --- p.15 / Chapter 3.1.2.2 --- Isochronal annealing --- p.20 / Chapter 3.2 --- PL studies of ZnxCd1-xSe/InP at 10 K temperature --- p.22 / Chapter 3.2.1 --- As-grown ZnxCd1-xSe/InP --- p.22 / Chapter 3.2.1.1 --- Excitation power density dependence --- p.22 / Chapter 3.2.1.2 --- Peak energy vs Zn concentration --- p.26 / Chapter 3.2.2 --- Annealing studies --- p.29 / Chapter 3.2.2.1 --- Isothermal annealing --- p.29 / Chapter 3.2.2.2 --- Isochronal annealing --- p.33 / Chapter 3.3 --- Temperature dependent PL studies of ZnxCd1-xSe/InP --- p.37 / Chapter 3.3.1 --- As-grown ZnxCd1-xSe/InP --- p.37 / Chapter 3.3.1.1 --- Peak energy vs temperature --- p.37 / Chapter 3.3.1.2 --- Peak width vs temperature --- p.46 / Chapter 3.3.2 --- Annealing studies --- p.50 / Chapter 3.3.1.1 --- Peak energy vs temperature --- p.50 / Chapter 3.3.1.2 --- Peak width vs temperature --- p.55 / Chapter Chapter 4 --- Conclusions --- p.59 / References --- p.61

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_322258
Date January 1998
ContributorsWong, Kin Sang., Chinese University of Hong Kong Graduate School. Division of Physics.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, bibliography
Formatprint, ii, 62 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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