Return to search

Monte Carlo study of hole transport in bulk silicon, gallium arsenide, gallium nitride and relate device structures

No description available.

1. http://hdl.handle.net/1853/16712
2. 438491

Identifer	oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/16712
Date	08 1900
Creators	Og̃uzman, İsmail Hakki
Publisher	Georgia Institute of Technology
Source Sets	Georgia Tech Electronic Thesis and Dissertation Archive
Detected Language	English
Type	Dissertation
Rights	Access restricted to authorized Georgia Tech users only.