Lau Wai Kwok. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references. / Acknowledgement --- p.iv / Abstract --- p.v / Chapter Chapter 1 --- Introduction --- p.1-1 / Chapter 1.1 --- Perspective --- p.1-1 / Chapter 1.2 --- MEDICI - The Simulation Package --- p.1 -2 / Chapter 1.3 --- Overview --- p.1-3 / Chapter Chapter 2 --- The Emergence of SOI Devices --- p.2-1 / Chapter 2.1 --- Introduction --- p.2-1 / Chapter 2.2 --- Advantages of SOI Devices --- p.2-1 / Chapter 2.2.1 --- Reliability Improvement --- p.2-2 / Chapter 2.2.2 --- Total Isolation --- p.2-3 / Chapter 2.2.3 --- Improved Junction Structure --- p.2-4 / Chapter 2.2.4 --- Integrated Device Structure --- p.2-5 / Chapter 2.3 --- Categories of SOI Devices --- p.2-6 / Chapter 2.3.1 --- Thick Film SOI Devices --- p.2-7 / Chapter 2.3.2 --- Thin Film SOI Devices --- p.2-8 / Chapter 2.3.3 --- Medium Film SOI Devices --- p.2-8 / Chapter 2.4 --- Drawbacks of SOI Devices --- p.2-9 / Chapter 2.4.1 --- Floating Body Effects --- p.2-9 / Chapter 2.4.2 --- Parasitic Bipolar Effects --- p.2-11 / Chapter 2.4.3 --- Cost --- p.2-15 / Chapter 2.5 --- Manufacturing Methods --- p.2-16 / Chapter 2.5.1 --- Epitaxy-Based Method --- p.2-16 / Chapter 2.5.2 --- Recrystallization-Based Method --- p.2-18 / Chapter 2.5.3 --- Wafer Bonding Based Method --- p.2-19 / Chapter 2.5.4 --- Oxidation Based Method --- p.2-20 / Chapter 2.5.5 --- Implantation Based Method --- p.2-22 / Chapter 2.6 --- Future Trend --- p.2-22 / Chapter 2.7 --- The Quest for Silicon-On-Nitride Structure --- p.2-23 / Chapter Chapter 3 --- Description of Body-Contact SOI Structure --- p.3-1 / Chapter 3.1 --- Introduction --- p.3-1 / Chapter 3.2 --- Current Status of Body-Contact SOI Structure --- p.3-1 / Chapter 3.3 --- The Body-Contact SOI Structure to be studied --- p.3-4 / Chapter 3.4 --- Impact on Device Fabrication --- p.3-7 / Chapter 3.4.1 --- Fabrication of Conventional Bulk CMOS --- p.3-7 / Chapter 3.4.2 --- Fabrication of Conventional SOI CMOS --- p.3-8 / Chapter 3.4.3 --- Fabrication of BC SOI CMOS --- p.3-10 / Chapter Chapter 4 --- Device Simulations --- p.4-1 / Chapter 4.1 --- Introduction --- p.4-1 / Chapter 4.2 --- MEDICI --- p.4-1 / Chapter 4.2.1 --- Basic Equations --- p.4-2 / Chapter 4.2.2 --- Solution Methods --- p.4-3 / Chapter 4.2.3 --- Initial Guess --- p.4-6 / Chapter 4.2.4 --- Grid Allocations --- p.4-7 / Chapter 4.2.5 --- Source File --- p.4-8 / Chapter 4.3 --- Structures for Simulations --- p.4-9 / Chapter 4.3.1 --- l.2μm NMOS Bulk (LDD) --- p.4-9 / Chapter 4.3.2 --- 1.2μm SOI(O) NMOS 1000/3500 NBC --- p.4-11 / Chapter 4.3.3 --- 1.2μm SOI(N) NMOS 1000/3500 NBC --- p.4-12 / Chapter 4.3.4 --- 1.2μm SOI(O) NMOS 1000/3500 WBC --- p.4-13 / Chapter 4.3.5 --- 1.2μm SOI(N) NMOS 1000/3500 WBC --- p.4-14 / Chapter 4.4 --- Summary --- p.4-14 / Chapter Chapter 5 --- Simulation Results --- p.5-1 / Chapter 5.1 --- Introduction --- p.5-1 / Chapter 5.2 --- Comparisons of Different Structures --- p.5-1 / Chapter 5.2.1 --- Impurity Profiles of Structures --- p.5-2 / Chapter 5.2.2 --- Body Effect --- p.5-10 / Chapter 5.2.3 --- Breakdown Voltage and Transistor Current Driving --- p.5-16 / Chapter 5.2.4 --- Transconductance and Mobility --- p.5-20 / Chapter 5.2.5 --- Subthreshold Swing --- p.5-23 / Chapter 5.3 --- Dependence on Key Structure Parameters --- p.5-29 / Chapter 5.3.1 --- Dependence on Insulator Thickness --- p.5-29 / Chapter 5.3.2 --- Dependence on Silicon Overlayer Thickness --- p.5-34 / Chapter 5.3.3 --- Dependence on Size of Body-Contact --- p.5-37 / Chapter 5.4 --- Summary --- p.5-40 / Chapter Chapter 6 --- Reduction of Latch-up Susceptibility --- p.6-1 / Chapter 6.1 --- Introduction --- p.6-1 / Chapter 6.2 --- Construction of a p-channel MOS Transistor --- p.6-2 / Chapter 6.2.1 --- Threshold Voltage and Body Effect --- p.6-3 / Chapter 6.2.2 --- I-V Characteristics --- p.6-3 / Chapter 6.2.3 --- Transconductance --- p.6-5 / Chapter 6.2.4 --- Subthreshold Swing --- p.6-5 / Chapter 6.3 --- Mechanism of Latch-up in CMOS --- p.6-6 / Chapter 6.4 --- Construction of a CMOS Invertor for Simulation --- p.6-10 / Chapter 6.5 --- Latch-up Susceptibility Dependence --- p.6-16 / Chapter 6.5.1 --- Dependence on Insulator Thickness --- p.6-16 / Chapter 6.5.2 --- Dependence on N-well Depth --- p.6-19 / Chapter 6.5.3 --- Dependence on Transistor Separation --- p.6-22 / Chapter 6.5.4 --- Dependence on Size of Body-Contact --- p.6-25 / Chapter 6.6 --- Summary --- p.6-28 / Chapter Chapter 7 --- Conclusions --- p.7-1 / Chapter 7.1 --- Summary --- p.7-1 / Chapter 7.2 --- Recommendation --- p.7-3 / Reference / Appendix A
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_321565 |
| Date | January 1996 |
| Contributors | Lau, Wai Kwok., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering. |
| Publisher | Chinese University of Hong Kong |
| Source Sets | The Chinese University of Hong Kong |
| Language | English |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, 1 v. (various pagings) : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
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