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Damage enhanced diffusion of impurities in semiconductors.

by Lo Veng Cheong. / Parallel title in Chinese characters. / Thesis (Ph.D.) -- Chinese University of Hong Kong, 1991. / Bibliography: leaves 116-119. / ACKNOWLEDGEMENT --- p.i / ABSTRACT --- p.ii / LIST OF SYMBOLS --- p.iv / LIST OF FIGURES --- p.ix / LIST OF TABLES --- p.xii / Chapter CHAPTER ONE --- INTRODUCTION --- p.1 / Chapter CHAPTER TWO --- SURVEYS ON THEORETICAL MODELS --- p.7 / Chapter 2.1 --- Some Basic Concepts --- p.7 / Chapter 2.1.1 --- Vacancy Mechanism and Interstitial Mechanism --- p.7 / Chapter 2.1.2 --- Relative Contribution from Various Point Defects Species --- p.15 / Chapter 2.1.3 --- Impurity Point Defect Pairs or 'Centers' --- p.20 / Chapter 2.1.4 --- Anomalous Diffusion --- p.21 / Chapter 2.2 --- Historical Review on Theoretical Models --- p.22 / Chapter 2.3 --- Formulation of the General Model --- p.29 / Chapter 2.3.1 --- Effects to be and Not to be Considered --- p.30 / Chapter 2.3.2 --- Derivation of the Basic Equations --- p.31 / Chapter CHAPTER THREE --- MODELING OF THE DAMAGE ENHANCED DIFFUSION OF IMPLANTED BORONS IN SILICON --- p.35 / Chapter 3.1 --- Brief Description of Powell's Experiment --- p.35 / Chapter 3.2 --- Modeling --- p.38 / Chapter 3.3 --- Results and Discussion --- p.45 / Chapter CHAPTER FOUR --- EXPERIMENTAL INVESTIGATION OF BORON DIFFUSION DIFFUSION ASSISTED BY THE NON-UNIFORMITY OF POINT DEFECTS --- p.66 / Chapter 4.1 --- Introduction --- p.66 / Chapter 4.2 --- Experimental --- p.67 / Chapter 4.3 --- Results and Discussion --- p.88 / Chapter CHAPTER FIVE --- CONCLUSION AND FURTHER SUGGESTIONS --- p.103 / Chapter 5.1 --- Conclusion --- p.103 / Chapter 5.2 --- Further Suggestions --- p.104 / Chapter APPENDIX A --- DOPANT CONCENTRATION DEPENDENCE OF THE ENHANCED DIFFUSION --- p.107 / Chapter APPENDIX B --- FLOW CHART OF NUMERICAL SIMULATION --- p.111 / REFERENCE --- p.116

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_318811
Date January 1991
ContributorsLo, Veng Cheong., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering.
PublisherChinese University of Hong Kong
Source SetsThe Chinese University of Hong Kong
LanguageEnglish
Detected LanguageEnglish
TypeText, bibliography
Formatprint, xii, 119 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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